Hybridization of ellipsometry and energy loss spectra from XPS for bandgap and optical constants determination in SiON thin films

In this study, we first compare the bandgap determination methods in SiON thin films using two established techniques: Ellipsometry and Energy Loss Spectrum from X-ray Photoelectron Spectroscopy. ellipsometry case, modelled optical properties a single Tauc-Lorentz oscillator model, range 1.5 to 6 eV, while for XPS used threshold energy of O1s N1s main core levels determine bandgap. We observed consistent difference values obtained between methods, reaching up 1.6 eV. Therefore, combined measurements, creating hybrid metrology method triple model. This methodology respected relations each technique complex dielectric constant material, an overlap measurements 3.5 The combination brings advantage more robust SiO2–Si3N4 system, way measure refractive index coefficient extinction intermixed SiON, 30